Dual-Band Power Amplifier Design at 28/38 GHz for 5G New Radio Applications

This paper presents the design of a dual-band power amplifier (PA) featuring similar performance at 28 GHz and 38 GHz. In new radio (NR) fifth generation (5G) communication system, inter-band carrier aggregation technique is commonly adopted for data rate enhancement. such configuration, operation both bands 5G frequency range 2 (FR2) spectrum often necessary. The stacked-FET topology was mitigation gain roll-off with to achieve bands. Implemented in commercial 0.15-μm gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) technology, PA delivered small signal 18.5/18 dB, an output saturation (Psat) 28.5/28.2 dBm, peak power-added efficiency (PAE) 39%/36% 28/38 GHz, respectively. measurement results have demonstrated great potential proposed NR applications.